MOSFET Transistor

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• High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage

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• Item Code: 8541
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• Packaging Details: 1000

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P-Channel Mosfet

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Riding on unfathomable volumes of industrial expertise, we are engaged in offering a broad assortment of MOSFETS.

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N CHANNEL MOSFET 200V 49A

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N-CHANNEL MOSFET 500V

We are Dealing in MOSFET Transistor

We are Wholesale Trader in Industrial electronic components for more than two decades dealing in a wide range of components. We provide our value-added services to various facets of the industry. It covers Automotive,Embedded Systems, Medical Instruments, Process Controls & Automation, Power Distribution.

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The most common type of insulated gate FET which is used in many different types of electronic circuits is called the Metal Oxide Semiconductor Field Effect Transistor or MOSFET for short.

The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass.

This ultra thin insulated metal gate electrode can be thought of as one plate of a capacitor. The isolation of the controlling Gate makes the input resistance of the MOSFETextremely high way up in the Mega-ohms ( MΩ ) region thereby making it almost infinite.

As the Gate terminal is electrically isolated from the main current carrying channel between the drain and source, “NO current flows into the gate” and just like the JFET, the MOSFET also acts like a voltage controlled resistor where the current flowing through the main channel between the Drain and Source is proportional to the input voltage. Also like the JFET, the MOSFETs very high input resistance can easily accumulate large amounts of static charge resulting in the MOSFET becoming easily damaged unless carefully handled or protected.

Like the previous JFET tutorial, MOSFETs are three terminal devices with a Gate, Drainand Source and both P-channel (PMOS) and N-channel (NMOS) MOSFETs are available. The main difference this time is that MOSFETs are available in two basic forms:

• Depletion Type   –   the transistor requires the Gate-Source voltage, ( VGS ) to switch the device “OFF”. The depletion mode MOSFET is equivalent to a “Normally Closed” switch.
• Enhancement Type   –   the transistor requires a Gate-Source voltage, ( VGS ) to switch the device “ON”. The enhancement mode MOSFET is equivalent to a “Normally Open” switch.

The symbols and basic construction for both configurations of MOSFETs are shown below.

 

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The FDA59n30 MOSFET Transistoris a semiconductor device which is widely used for switching and amplifying electronic signals in the electronic devices.  The MOSFET is a core of integrated circuit and it can be designed and fabricated in a single chip because of these very small sizes.  The MOSFET is a four terminal device with source(S), gate (G), drain (D) and body (B) terminals. The body of the MOSFET is frequently connected to the source terminal so making it a three terminal device like field effect transistor. The MOSFET is very far the most common transistor and can be used in both analog and digital circuits.

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The most common type of insulated gate FET which is used in many different types of electronic circuits is called the Metal Oxide Semiconductor Field Effect Transistor or MOSFET for short.

The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass.

This ultra thin insulated metal gate electrode can be thought of as one plate of a capacitor. The isolation of the controlling Gate makes the input resistance of the MOSFETextremely high way up in the Mega-ohms ( MΩ ) region thereby making it almost infinite.

 

 

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We have ready stock of Biopolar Transistor. A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier.

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XS4202 is a fast recovery diode.

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This N-channel Mosfet is used in ups, inverter, solar, battery charges and automotive sector.

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We are a highly acknowledged organization, engaged in presenting a remarkable range of  IRFP4668PBF MOSFET Transistor.

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• Minimum Order Quantity: 20 Piece

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• Minimum Order Quantity: 20 Piece

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• Minimum Order Quantity: 20 Piece

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• Minimum Order Quantity: 20 Piece

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• Minimum Order Quantity: 20 Piece

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• Minimum Order Quantity: 20 Piece